In-situ Monitoring of GaN Epilayers by Spectral Reflectance

Indentation-induced damage in GaN epilayers

Photoluminescence quantum efficiency of Er optical centers in GaN epilayers

We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN under resonant excitation excitations were performed. Data provide a ...

Short-wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD

In this paper, five-period InGaN/GaN multiple quantum well green light-emitting diodes (LEDs) were grown by metal organic chemical vapor deposition with 405-nm light beam in situ monitoring system. Based on the signal of 405-nm in situ monitoring system, the related information of growth rate, indium composition and interfacial quality of each InGaN/GaN QW were obtained, and thus, the growth co...

Reflectance and photoluminescence characterization of BexZn1 xTe epilayers

BexZn1 xTe thin films were grown on InP substrates by molecular beam epitaxy (MBE). Optical properties of the epilayers were studied using reflectance and photoluminescence (PL) measurements. An increase in the full width at half maximum of the emission line with the increase in BeTe content was observed and explained by the disorder-induced broadening. The temperature dependence of the band ga...

Magnetron Sputter Epitaxy of GaN Epilayers and Nanorods